Schottky barrier diodes with a guard ring formed by selective epitaxy

ABSTRACT

Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.

BACKGROUND

The present invention relates to semiconductor device fabrication and,more specifically, to device structures for a Schottky barrier diode,fabrication methods for Schottky barrier diodes, and design structuresfor a Schottky barrier diode.

Schottky barrier diodes are semiconductor diodes characterized by lowforward voltage drop and fast switching action. A typical Schottkybarrier diode features a conductor-semiconductor junction that providesrectifying characteristics, such as junction between highly-dopedsilicon and metal silicide layers. A Schottky barrier diode may includea guard ring that prevents excessive leakage current.

To extend the capabilities of the technology, improved devicestructures, fabrication methods, and design structures are needed forSchottky barrier diodes.

SUMMARY

According to one embodiment of the present invention, a method isprovided for fabricating a device structure. The method includes aSchottky barrier diode and forming a guard ring for a Schottky barrierdiode with a selective epitaxial growth process.

According to another embodiment of the present invention, a devicestructure includes a device region, a Schottky barrier diode, and aguard ring for the Schottky barrier diode. The device region iscomprised of a first semiconductor material. The Schottky barrier diodehas an anode on a top surface of the device region, a cathode in thedevice region, and a Schottky junction defined between the anode andcathode. The guard ring is comprised of a second semiconductor materialhaving an epitaxial relationship with the first semiconductor material.

According to another embodiment of the present invention, a designstructure is provided that is readable by a machine used in design,manufacture, or simulation of an integrated circuit. The designstructure includes a device region, a Schottky barrier diode, and aguard ring for the Schottky barrier diode. The device region iscomprised of a first semiconductor material. The Schottky barrier diodehas an anode on a top surface of the device region, a cathode in thedevice region, and a Schottky junction defined between the anode andcathode. The guard ring is comprised of a second semiconductor materialhaving an epitaxial relationship with the first semiconductor material.The design structure may comprise a netlist. The design structure mayalso reside on storage medium as a data format used for the exchange oflayout data of integrated circuits. The design structure may reside in aprogrammable gate array.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate various embodiments of theinvention and, together with a general description of the inventiongiven above and the detailed description of the embodiments given below,serve to explain the embodiments of the invention.

FIG. 1A is a cross-sectional view of a portion of a substrate at aninitial stage of a processing method for fabricating a bipolar junctiontransistor in accordance with an embodiment of the invention.

FIG. 1B is a cross-sectional view similar to FIG. 1A of a differentportion of the substrate at an initial stage of a processing method forfabricating a Schottky barrier diode in accordance with an embodiment ofthe invention.

FIGS. 2A-10A and 2B-10B are cross-sectional views of the respectivesubstrate portions shown in FIGS. 1A, 1B at successive subsequentfabrication stages of the processing method.

FIG. 11 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

With reference to FIGS. 1A, 1B and in accordance with an embodiment ofthe invention, a substrate 10 includes trench isolation regions 12, 13that circumscribe and electrically isolate device regions 16, 17. Deviceregion 16 is used in the fabrication of a bipolar junction transistor 84(FIG. 10A). Device region 17 is used in the fabrication of a Schottkybarrier diode 86 (FIG. 10B).

The substrate 10 may be any type of suitable bulk substrate comprising asemiconductor material suitable for forming an integrated circuit. Forexample, the substrate 10 may be a wafer comprised of a monocrystallinesilicon-containing material, such as single crystal silicon wafer with a(100) crystal lattice orientation. The monocrystalline semiconductormaterial of the substrate 10 may contain a definite defect concentrationand still be considered single crystal. The semiconductor materialcomprising substrate 10 may include an optional epitaxial layer on abulk substrate, such as an epitaxial layer comprised of lightly-dopedn-type semiconductor material that defines a top surface 25 and thatcovers an oppositely-doped bulk substrate.

Trench isolation regions 12, 13 may be isolation structures formed by ashallow trench isolation (STI) technique that relies on a lithographyand dry etching process to define closed-bottomed trenches in substrate10, fill the trenches with dielectric, and planarize the layer relativeto the top surface 25 of the substrate 10 using a chemical mechanicalpolishing (CMP) process. The dielectric may be comprised of an oxide ofsilicon, such as densified tetraethylorthosilicate (TEOS) deposited bychemical vapor deposition (CVD) or a high-density plasma (HDP) oxidedeposited with plasma assistance.

A collector region 18 and a subcollector region 20 of the bipolarjunction transistor 84 are present as impurity-doped regions in thedevice region 16. Similarly, impurity-doped regions 21, 23 are presentin the device region 17. The collector region 18, subcollector region20, and impurity-doped regions 21, 23 may be formed beneath the topsurface 25 by introducing an electrically-active dopant, such as animpurity species from Group V of the Periodic Table (e.g., phosphorus(P), arsenic (As), or antimony (Sb)) effective to impart an n-typeconductivity in which electrons are the majority carriers and dominatethe electrical conductivity of the host semiconductor material. In oneembodiment, collector region 18, subcollector region 20, andimpurity-doped regions 21, 23 may be formed by ion implanting an n-typeimpurity species and thereafter annealing to activate the impurityspecies and lessen implantation damage using techniques and conditionsfamiliar to one skilled in the art. In one specific embodiment, thecollector region 18 and impurity-doped region 21 may each comprise aselectively implanted collector (SIC) formed by implanting an n-typedopant with selected dose and kinetic energy into the central part ofthe device regions 16, 17 and may be formed at any appropriate point inthe process flow. In one specific embodiment, the subcollector region 20and impurity doped region 23 may be formed by a high-current ionimplantation followed by lengthy, high temperature thermal annealprocess that dopes a thickness of the substrate 10 before the optionalepitaxial layer is formed. During process steps subsequent toimplantation, the dopant in the collector region 18 may diffuselaterally and vertically such that substantially the entire centralportion of device region 16 becomes doped and continuous structurally isand electrically with the subcollector region 20. Similarly, the dopantin the impurity-doped region 21 may also exhibit transport fromdiffusion similar to the dopant diffusion experienced by the collectorregion 18 and become structurally and electrically continuous with theimpurity doped region 23 as well as extend to the top surface 25.

An intrinsic base layer 22, which is comprised of a material suitablefor forming an intrinsic base of the bipolar junction transistor 84, isdeposited as a continuous additive layer on the top surface 25 ofsubstrate 10 and, in particular on the top surface 25 of the deviceregion 16. In the representative embodiment, the intrinsic base layer 22directly contacts the top surface 25 of the device region 16 and a topsurface of the trench isolation regions 12, 13. The intrinsic base layer22 may be comprised of a semiconductor material, such assilicon-germanium (SiGe) including silicon (Si) and germanium (Ge) in analloy with the silicon content ranging from 95 atomic percent to 50atomic percent and the germanium content ranging from 5 atomic percentto 50 atomic percent. The germanium content of the intrinsic base layer22 may be uniform or the germanium content of intrinsic base layer 22may be graded or stepped across the thickness of intrinsic base layer22. Alternatively, the intrinsic base layer 22 may be comprised of adifferent semiconductor material, such as silicon (Si). The intrinsicbase layer 22 may be doped with one or more impurity species, such asboron and/or carbon.

Intrinsic base layer 22 may be formed using a low temperature epitaxial(LTE) growth process (typically at a growth temperature ranging from400° C. to 850° C.). The epitaxial growth process is performed after thetrench isolation regions 12, 13 are formed. The epitaxial growth processis non-selective as single crystal semiconductor material (e.g., singlecrystal silicon or SiGe) may be deposited epitaxially onto any exposedcrystalline surface such as the exposed top surface 25 of device region16, and non-monocrystalline semiconductor material (e.g., polysilicon orpolycrystalline SiGe) is deposited non-epitaxially onto thenon-crystalline material of the trench isolation regions 12 or regions(not shown) where polycrystalline semiconductor material already exists.

The non-selectivity of the growth process causes the intrinsic baselayer 22 to incorporate topography. Specifically, the intrinsic baselayer 22 includes a raised region 24 above the device region 16, anon-raised region 26 surrounding the raised region 24, and a facetregion 28 between the raised region 24 and the non-raised region 26. Theraised region 24 of the intrinsic base layer 22 is comprised ofmonocrystalline semiconductor material and is laterally positioned invertical alignment with the collector region 18. A top surface of theraised region 24 is elevated relative to a plane containing the topsurface 25 of the device region 16. The raised region 24 iscircumscribed by the shallow trench isolation regions 12.

The non-raised region 26 of the intrinsic base layer 22 is comprised ofpolycrystalline semiconductor material and overlies the trench isolationregions 12 near the raised region 24. In the absence of epitaxialseeding over the trench isolation regions 12, the non-raised region 26forms with a low growth rate outside of the device region 16. The facetregion 28 of the intrinsic base layer 22 may be comprised ofmonocrystalline material transitioning to polycrystalline material. Thethickness of the intrinsic base layer 22 may range from about 10 nm toabout 600 nm with the largest layer thickness in the raised region 24and the layer thickness of the non-raised region 26 less than the layerthickness of the raised region 24. The layer thicknesses herein areevaluated in a direction normal to the top surface 25 of substrate 10.

The intrinsic base layer 22 also forms on device region 17 and may beseparated from the top surface 25 by one or more intervening layers (notshown). For example, the top surface 25 of device region 17 may beoptionally covered by a thin layer of silicon dioxide (SiO₂) and anoverlying polysilicon layer. The intrinsic base layer 22 and any otherlayers are removed from the top surface 25 of the device region 17 sothat device region 17 is free of a layer of the semiconductor materialconstituting the intrinsic base layer 22. In particular, the intrinsicbase layer 22 on device region 16 is masked and the semiconductormaterial of the intrinsic base layer 22 is removed from device region 17using photolithography and an etching process. To that end, a patternedmask layer (not shown) is applied with an opening that exposes thesemiconductor material of the intrinsic base layer 22 located on thedevice region 17. In one embodiment, the mask layer may be a photoresistlayer comprised of a sacrificial organic material applied by spincoating and pre-baked. The photolithography process entails exposing thephotoresist layer to radiation imaged through a photomask, baking, anddeveloping the resultant latent feature pattern in the exposed resist todefine the opening exposing the semiconductor material of the intrinsicbase layer 22 located on the device region 17. An etching process, suchas a reactive-ion etching (RIE) process is used to remove thesemiconductor material of the intrinsic base layer 22 from the deviceregion 17. This exposes the top surface 25 of the device region 17.

A base dielectric layer 32 is formed on a top surface 30 of intrinsicbase layer 22 and, in the representative embodiment, directly contactsthe top surface 30. In device region 16 (FIG. 1A), the base dielectriclayer 32 reproduces the topography of the underlying intrinsic baselayer 22. The base dielectric layer 32 is also formed on the top surface25 of the device region 17 and may merge with any preexisting dielectriclayer (e.g., SiO₂). The base dielectric layer 32 may be an insulatingmaterial with a dielectric constant (e.g., a permittivity)characteristic of a dielectric. In one embodiment, the base dielectriclayer 32 may be a high temperature oxide (HTO) deposited using rapidthermal process (RTP) at temperatures of 500° C. or higher, and may becomprised of an oxide of silicon, such as SiO₂ having a nominaldielectric constant of 3.9. Alternatively, if the base dielectric layer32 is comprised of oxide, the material of base dielectric layer 32 maybe deposited by a different deposition process, by thermal oxidation ofsilicon (e.g., oxidation at high pressure with steam (HIPOX)), or by acombination of oxide formation techniques known to those of ordinaryskill in the art.

A sacrificial layer stack 31 including sacrificial layers 36, 40 is thenformed. Sacrificial layer 36 is deposited on a top surface 34 of basedielectric layer 32 and directly contacts the top surface 34.Sacrificial layer 40, which is optional, is deposited on a top surface38 of sacrificial layer 36. The sacrificial layers 36, 40 reproduce thetopography of the underlying intrinsic base layer 22 in device region16. The sacrificial layer stack 31 is also formed on the top surface 25of the device region 17 and is separated from the top surface 25 by thebase dielectric layer 32.

Sacrificial layer 36 may be comprised of a material with a differentetching selectivity than the material of the underlying base dielectriclayer 32. In one embodiment, sacrificial layer 36 may be comprised ofpolycrystalline silicon (e.g., polysilicon) deposited by a conventionaldeposition process such as low pressure chemical vapor phase deposition(LPCVD) using either silane or disilane as a silicon source or physicalvapor deposition (PVD). Sacrificial layer 40 may be comprised of adielectric material with a different etching selectivity than thematerial of the underlying sacrificial layer 36. In one embodiment,sacrificial layer 40 may be comprised of SiO₂ deposited by CVD oranother suitable deposition process.

With reference to FIGS. 2A, 2B in which like reference numerals refer tolike features in FIGS. 1A, 1B and at a subsequent fabrication stage, thesacrificial layers 36, 40 of the sacrificial layer stack 31 arepatterned using photolithography and etching processes to definesacrificial mandrels in the form of a sacrificial emitter pedestal 44.To that end, the sacrificial layer stack 31 is masked with a patternedmask layer (not shown). In one embodiment, the mask layer may be aphotoresist layer comprised of a sacrificial organic material applied tothe top surface 42 of sacrificial layer 40 by spin coating andpre-baked. The photolithography process entails exposing the photoresistlayer to radiation imaged through a photomask, baking, and developingthe resultant latent feature pattern in the exposed resist to defineresidual areas of photoresist that mask portions of sacrificial layerstack 31. In particular, the mask includes a resist strip covering asurface area on a top surface 42 of sacrificial layer 40 at the intendedlocation of the sacrificial emitter pedestal 44.

An etching process, such as a reactive-ion etching (RIE) process, isused to remove regions of sacrificial layers 36, 40 not protected by themask layer. For example, an initial segment of the etching process mayremove unprotected regions of sacrificial layer 40 and stop on thematerial of sacrificial layer 36. The etch chemistry may be changed toremove unprotected regions of the underlying sacrificial layer 36 andstop on the material of base dielectric layer 32. Alternatively, asimpler etch chemistry might be used that includes fewer etch steps andremoves both sacrificial layers 36, 40. At the conclusion of the etchingprocess, the top surface 34 of base dielectric layer 32 is exposed indevice region 17 aside from the portion of the top surface 34 covered bythe sacrificial emitter pedestal 44.

With reference to FIGS. 3A, 3B in which like reference numerals refer tolike features in FIGS. 2A, 2B and at a subsequent fabrication stage, ahardmask layer 48 is formed on device regions 16, 17. The hardmask layer48 may be a conformal blanket layer with a thickness that is independentof the topography of underlying features, such as the sacrificialemitter pedestal 44. Hardmask layer 48 may be comprised of a dielectricmaterial with a different etching selectivity than the underlying basedielectric layer 32. In one embodiment, hardmask layer 48 may becomprised of silicon nitride (Si₃N₄) deposited using CVD. Alternatively,the material of hardmask layer 48 may be deposited by another suitabledeposition process.

After hardmask layer 48 is deposited, a resist layer 50 comprised of aradiation-sensitive organic material is applied to a top surface 49 ofhardmask layer 48 by spin coating, pre-baked, exposed to radiation toimpart a latent image of a pattern including windows 52, 54, baked, andthen developed with a chemical developer. Windows 52, 54 are defined asrespective openings in the resist layer 50.

With reference to FIGS. 4A, 4B in which like reference numerals refer tolike features in FIGS. 3A, 3B and at a subsequent fabrication stage, anetching process, such as a directional anisotropic etching process likeRIE that preferentially removes dielectric material from horizontalsurfaces, may be used to remove portions of the hardmask layer 48 inregions unmasked by the resist layer 50 (FIGS. 3A, 3B). The etchingprocess also etches the hardmask layer 48 to form non-conductive spacers56 on the sidewalls of the sacrificial emitter pedestal 44. Thenon-conductive spacers 56 surround the sidewalls of the sacrificialemitter pedestal 44. In one embodiment, the etching process is selectedwith an etch chemistry that selectively removes Si₃N₄ in hardmask layer48 relative to SiO₂ in the base dielectric layer 32. Following theetching process, the resist layer 50 is removed by oxygen plasma ashingand/or wet chemical stripping.

An opening surrounded by an interior edge 47 is defined by the etchingprocess in the hardmask layer 48 at the location of window 52 (FIG. 3A)and extends through the hardmask layer 48 to the top surface 34 of basedielectric layer 32. Another opening with an interior edge 71 is definedin the hardmask layer 48 at the location of window 54 (FIG. 3B) andextends to top surface 34 of base dielectric layer 32. A strip 62 of thebase dielectric layer 32 is peripherally inside the interior edge 71 andis covered by a region of the hardmask layer 48 having an exterior edge69.

With reference to FIGS. 5A, 5B in which like reference numerals refer tolike features in FIGS. 4A, 4B and at a subsequent fabrication stage,regions of the base dielectric layer 32 that are not masked by thepatterned hardmask layer 48 are selectively removed by an etchingprocess that stops on the material constituting intrinsic base layer 22.The sacrificial emitter pedestal 44 and non-conductive spacers 56 alsomask a surface area of the base dielectric layer 32 in device region 16.

The etching process exposed a portion of the top surface 30 of intrinsicbase layer 22 in device region 16 between the interior edge 47 of theopening in the hardmask layer 48 and the non-conductive spacers 56 onthe sacrificial emitter pedestal 44. This portion of the top surface 30is an intended location for the extrinsic base layer 64 of the bipolarjunction transistor 84. The etching process exposes a portion 46 of thetop surface 25 of device region 17 between the exterior and interioredges 69, 71 of patterned hardmask layer 48. This portion of the topsurface 25 is positioned at an intended location for the guard ring 73.The portion 46 of the top surface 25 is a closed geometrical shape, suchas a ring shape or a rectangular shape, that surrounds the surface areaof the top surface 25 of the device region 17 masked by the overlyingregion of the patterned hardmask layer 48.

In one embodiment, the etching process may be chemical oxide removal(COR) that removes the material of base dielectric layer 32, ifcomprised of SiO₂, with minimal undercut beneath the non-conductivespacers 56. A COR process utilizes a vapor or, more preferably, amixture flow of hydrogen fluoride (HF) and ammonia (NH₃) in a ratio of1:10 to 10:1 and may be performed at low pressures (e.g., of about 1mTorr to about 100 mTorr) and room temperature. The COR process may beperformed in situ in the deposition chamber or may be performed in anindependent chamber. Sacrificial layer 40 is also removed, or optionallyonly partially removed, from the sacrificial layer stack 31 by theetching process. An optional hydrofluoric acid chemical cleaningprocedure may follow the COR process.

With reference to FIGS. 6A, 6B in which like reference numerals refer tolike features in FIGS. 5A, 5B and at a subsequent fabrication stage, anextrinsic base layer 64 is formed on the portions of the top surface 30of intrinsic base layer 22 in device region 16 and the portion 46 of thetop surface 25 of the device region 17 that are not covered by thepatterned hardmask layer 48. In the representative embodiment, theextrinsic base layer 64 directly contacts the respective top surfaces25, 30. A cap 68 comprised of the material of the extrinsic base layer64 are formed on top of the sacrificial layer 36 between non-conductivespacers 56. The material of the extrinsic base layer 64 does not form onhardmask layer 48 or on the non-conductive spacers 56.

In one embodiment, the extrinsic base layer 64 may be comprised of asemiconductor material (e.g., silicon or SiGe) formed by a selectiveepitaxial growth (SEG) deposition process. If comprised of SiGe, theconcentration of Ge may have a graded or an abrupt profile if theextrinsic base layer 64 is comprised of SiGe, and may include additionallayers, such as a Si cap. Epitaxial growth is a process by which a layerof single-crystal material, i.e., the extrinsic base layer 64, isdeposited on a single-crystal substrate (i.e., the intrinsic base layer22 and the device region 17) and in which the crystallographic structureof the single-crystal substrate is reproduced in the layer 64. If thechemical composition of the extrinsic base layer 64 differs from thechemical composition of the intrinsic base layer 22 and/or the deviceregion 17, then a lattice constant mismatch may be present between theepitaxial material of the extrinsic base layer 64 and the intrinsic baselayer 22 and/or the device region 17.

In an SEG deposition process, nucleation of the constituentsemiconductor material is suppressed on insulators, such as on the topsurface 49 of the hardmask layer 48 and on the non-conductive spacers56. The selectivity of the SEG deposition process forming the extrinsicbase layer 64 may be provided by an etchant, such as hydrogen chloride(HCl), in the reactant stream supplied to the SEG reaction chamber or bythe germanium source, such as germane (GeH₄) or digermane (Ge₂H₆),supplied to the SEG reaction chamber. If the extrinsic base layer 64does not contain germanium, then a separate etchant may be supplied tothe SEG reaction chamber to provide the requisite selectivity. If theextrinsic base layer 64 contains germanium formed using a germaniumsource gas, the provision of an additional etchant to the SEG reactionchamber is optional.

The extrinsic base layer 64 may be in situ doped during deposition witha concentration of a dopant, such as an impurity species from Group IIIof the Periodic Table (e.g., boron or indium) effective to impart ap-type conductivity in which holes are the majority carriers anddominate the electrical conductivity of the host semiconductor material.The extrinsic base layer 64 may comprise heavily-doped p-typesemiconductor material.

In device region 16, the material in the extrinsic base layer 64 isultimately used to form an extrinsic base of the bipolar junctiontransistor 84. The uneven topography of the underlying intrinsic baselayer 22 is at least partially reproduced in the extrinsic base layer 64on device region 16 so that the extrinsic base layer 64 has a raisedregion 65 that overlies the raised region 24 of the intrinsic base layer22.

In device region 17, a guard ring 73 for the Schottky barrier diode 86(FIG. 10B) is formed from the material of the extrinsic base layer 64.The guard ring 73 is comprised of the semiconductor material of theextrinsic base layer 64 that forms on the portion 46 of the top surface25 the device region 17 and directly contacts the top surface 25. Aninner sidewall 75 of the guard ring 73 surrounds the strip 62 of thebase dielectric layer 32 and the overlying region of the hardmask layer48. The inner sidewall 75 constitutes a portion of an external surface66 of the guard ring 73. The guard ring 73 has a geometrical shape thatreproduces the geometrical shape of the portion 46 of the top surface 25in device region 17. Similar to the portion 46 of the top surface 25 indevice region 17, the guard ring 73 may be substantially circular or mayhave a polygonal (e.g., rectangular) shape, although other closedgeometrical shapes may be permitted. A top surface 77 of the guard ring73 is elevated or raised above the top surface 25 of the device region17 so that the surfaces 25, 77 are in different planes separated by theheight of the guard ring 73.

With reference to FIGS. 7A, 7B in which like reference numerals refer tolike features in FIGS. 6A, 6B and at a subsequent fabrication stage, aninsulating layer 70 is deposited that buries the sacrificial emitterpedestal 44 and the guard ring 73. The insulating layer 70 may becomprised of a dielectric, which is an insulating material having adielectric constant (e.g., permittivity) characteristic of a dielectricmaterial. In one embodiment, insulating layer 70 may be comprised ofSiO₂ formed by plasma-enhanced CVD (PECVD) or another suitabledeposition process. A top surface 72 of the insulating layer 70 isplanarized using a chemical-mechanical polishing (CMP) process so thatthe top surface 72 is flat. The CMP process combines abrasion anddissolution to remove a thickness of the insulating layer 70 so that thenon-planar topography of the top surface 72 from the presence of thesacrificial emitter pedestal 44 is reduced or eliminated, and the topsurface 72 is flattened over device region 16. The CMP process iscontrolled such that the sacrificial emitter pedestal 44 and guard ring73 remain buried beneath the top surface 72 of the insulator layer 70.

With reference to FIGS. 8A, 8B in which like reference numerals refer tolike features in FIGS. 7A, 7B and at a subsequent fabrication stage, anemitter window 74 is formed between the non-conductive spacers 56. Theemitter window 74 extends to the depth of the top surface 30 ofintrinsic base layer 22. During the formation of the emitter window 74,the guard ring remains buried beneath the top surface 72 of theinsulator layer 70.

To form the emitter window 74, the top surface 72 of insulating layer 70is recessed relative to the sacrificial emitter pedestal 44 with anetching process, such as RIE. The recession of the insulating layer 70exposes the cap 68 residing on the sacrificial layer 36. The sacrificiallayer 36 and the cap 68 are then removed from its position between thenon-conductive spacers 56 on the sacrificial emitter pedestal 44 afterthe recess of the top surface 72 of the insulating layer 70. Sacrificiallayer 36 and cap 68 may be removed using dry etching process that isselective to the materials of base dielectric layer 32, hardmask layer48, and non-conductive spacers 56. The etching process stops uponreaching the top surface 34 of the base dielectric layer 32. An etchingprocess such as a hydrofluoric acid type procedure like a dilutehydrofluoric (DHF) or a buffered hydrofluoric (BHF) wet procedure, or aCOR process is then applied to remove portions of the base dielectriclayer 32 over the surface area between the non-conductive spacers 56.The thickness of the insulating layer 70 is selected such that the guardring 73 is not modified by the etching processes forming the emitterwindow 74.

With reference to FIGS. 9A, 9B in which like reference numerals refer tolike features in FIGS. 8A, 8B and at a subsequent fabrication stage, anemitter 78 of the bipolar junction transistor 84 is formed in theemitter window 74. The emitter 78 has a bottom surface that directlycontacts the top surface 30 of the raised region 24 of intrinsic baselayer 22. The emitter 78, which is T-shaped, includes a head thatprotrudes out of the emitter window 74 and above the top surface 72 ofinsulating layer 70. The non-conductive spacers 56 encircle or surroundthe emitter 78 for electrically isolating the emitter 78 from theextrinsic base layer 64.

The emitter 78 of the bipolar junction transistor 84 may be formed bydepositing a layer comprised of a heavily-doped semiconductor materialand then patterning the deposited layer using lithography and etchingprocesses. For example, the emitter 78 may be formed from polysilicondeposited by CVD or rapid thermal CVD (RTCVD) and in situ doped with aheavy concentration of a dopant, such as an impurities species fromGroup V of the Periodic Table (e.g., arsenic) to impart n-typeconductivity. The heavy-doping level modifies the resistivity of thepolysilicon and may be implemented by in situ doping that adds a dopantgas to the CVD reactant gases during the deposition process.

The lithography process forming the emitter 78 from the layer ofheavily-doped semiconductor material may utilize photoresist andphotolithography to form an etch mask that protects only a strip of theheavily-doped semiconductor material spatially coincident with theemitter window 74. An etching process that stops on the material ofinsulating layer 70 is selected to shape the emitter 78 from theprotected strip of heavily-doped semiconductor material. The mask issubsequently stripped, which exposes the top surface 72 of insulatinglayer 70 surrounding the emitter 78 and over the device region 17.

The insulating layer 70, the extrinsic base layer 64, and the intrinsicbase layer 22 may be patterned using conventional photolithography andetching processes to define an extrinsic base and an intrinsic base ofthe bipolar junction transistor 84. The extrinsic base layer 64 isseparated from the emitter 78 by the non-conductive spacers 56. Sectionsof insulating layer 70 may be retained between the extrinsic base layer64 and the emitter 78. The insulating layer 70, hardmask layer 48, andbase dielectric layer 32 are also removed from device region 17.

The insulating layer 70, the extrinsic base layer 64, and the intrinsicbase layer 22 may be patterned using conventional photolithography andetching processes to define an extrinsic base and an intrinsic base ofthe bipolar junction transistor 84. The extrinsic base layer 64 isseparated from the emitter 78 by the non-conductive spacers 56. Sectionsof insulating layer 70 may be retained between the extrinsic base andthe emitter 78. The insulating layer 70, hardmask layer 48, and basedielectric layer 32 are also trimmed by similar patterning. A surfacearea of the top surface 25 of the device region 17 is exposed that isperipherally inside the inner sidewall 75 of the guard ring 73

With reference to FIGS. 10A, 10B in which like reference numerals referto like features in FIGS. 9A, 9B and at a subsequent fabrication stage,a silicide layer 82 is formed on the top surface 25 of the device region17 peripherally inside the inner sidewall 75 of the guard ring 73, onthe guard ring 73, and on the extrinsic base layer 64 of the bipolarjunction transistor 84. The silicide layer 82 is formed by asilicidation process. To that end, a layer comprising a silicide-formingmetal is deposited by, for example, a CVD process or a physical vapordeposition (PVD) process. The silicide-forming metal may be comprised oftitanium (Ti), cobalt (Co), nickel (Ni), or another suitable refractorymetal selected. An optional capping layer comprised of a metal nitride,such as titanium nitride (TiN) deposited by direct current (DC)sputtering or radio frequency (RF) sputtering, may be applied to themetal layer.

Annealing steps are used to form a silicide phase comprising thesilicide layer 82 where the silicide-forming metal has a contactingrelationship with semiconductor material of the external surface 66 ofguard ring 73 and a contacting relationship with the top surface 25 ofdevice region 17. Respective thin layers of the semiconductor materialof the extrinsic base layer 64 and the semiconductor material of thedevice region 17 are consumed during the reaction forming the silicidephase. The silicide phase constituting silicide layer 82 may becharacterized as a silicon-germanium silicide contingent upon thecomposition of extrinsic base layer 64. In an alternative embodiment, aseparate additive layer of silicon-containing material may be depositedon a top surface of the extrinsic base layer 64 and the top surface 25of the device region 17, before the metal layer is deposited, to provideadditional semiconductor material for the silicide reaction.

In a representative silicidation process, the metal and semiconductormaterial (e.g., Si or SiGe) are thermally reacted to form anintermediate silicide material. The formation anneal is performedemploying an ambient and a temperature known in the art to react themetal with semiconductor material. For example, the silicidation processmay be conducted in an inert gas ambient (e.g., a nitrogen atmosphere)and by heating at an annealing temperature contingent on the type ofsilicide using one or more rapid thermal annealing (RTA) steps.

In a formation anneal of a silicidation process, metal-rich silicidesinitially form and continue to grow until the metal is consumed. Whenthe metal layer has been consumed, silicides of lower metal contentbegin to appear and can continue to grow by consuming the metal-richsilicides. Following the formation anneal, any metal not converted intosilicide and the optional capping layer may be removed with, forexample, a selective wet chemical etch process. After the unconvertedmetal and optional capping layer are removed, the silicide layer 82 maybe subjected to another anneal process to form a lower-resistance phasefor the specific type of silicide comprising silicide layer 82. Thetemperature for the transformation anneal of the silicide layer 82 maybe higher than the temperature of the formation anneal.

The emitter 78, intrinsic base layer 22, and collector 18 of the bipolarjunction transistor 84 are vertically arranged. The intrinsic base layer22 is located vertically between the emitter 78 and the collector 18.One p-n junction is defined at the interface between the emitter 78 andthe intrinsic base layer 22. Another p-n junction is defined at theinterface between the collector 18 and the intrinsic base layer 22.

The portion of the silicide layer 82 in contact with the top surface 25of device region 17 acts as an anode of the Schottky barrier diode 86. ASchottky junction 88 of the Schottky barrier diode 86 is formed by thehorizontal boundary between the silicide layer 82 and a cathode 80defined by the nearby semiconductor material of the device region 17beneath the silicide layer 82. The optional impurity-doped region 21 maycontribute to forming the cathode 80. The Schottky junction 88 isdefined proximate to, or at, the top surface 25 of the device region 17and is contained within a plane that is substantially parallel to aplane containing the top surface 25. The guard ring 73 is raised abovethe top surface 25 of the device region 17 and, in particular, the topsurface 77 of the guard ring 73 projects above the Schottky junction 88.The guard ring 73 functions to reduce leakage current of the Schottkybarrier diode 86 at negative bias and high speed.

Standard back-end-of-line (BEOL) processing follows, which includesformation of contacts and wiring for the local interconnect structure,and formation of dielectric layers, via plugs, and wiring for aninterconnect structure coupled by the local interconnect wiring with thebipolar junction transistor 84 and Schottky barrier diode 86, as well asother similar contacts for additional device structures such as CMOStransistors included in other circuitry fabricated on the substrate 10.Other active and passive circuit elements, such as diodes, resistors,capacitors, varactors, and inductors, may be fabricated on substrate 10and available for use in the BiCMOS integrated circuit.

Fabrication of the Schottky barrier diode 86 requires only oneadditional mask that is shared with other devices, such as PIN diodes orhigh-voltage field-effect transistors. The one additional mask is usedto open an area on the top surface 25 of the device region 17 followingthe deposition of the intrinsic base layer 22. The guard ring 73 of theSchottky barrier diode 86 is formed from selectively grown semiconductormaterial (e.g., Si or SiGe) of the extrinsic base layer 64.

The bipolar junction transistor 84 is formed using device region 16concurrently with the formation of the Schottky barrier diode 86 usingdevice region 17. The collector region 18 of the bipolar junctiontransistor 84 and the optional impurity-doped region 21 of the Schottkybarrier diode 86 are concurrently formed using the respective deviceregions 16, 17 with the same processes and the same masks. The extrinsicbase of the bipolar junction transistor 84 and the guard ring 73 of theSchottky barrier diode 86 are concurrently by portions of theepitaxially-grown extrinsic base layer 64 formed on the respectivedevice regions 16, 17. During the front-end-of-line (FEOL) portion ofthe fabrication process, the device structure of the bipolar junctiontransistor 84 and Schottky barrier diode 86 may be replicated acrossdifferent portions of the surface area of the substrate 10.

FIG. 11 shows a block diagram of an exemplary design flow 100 used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture. Design flow 100 includes processes, machines and/ormechanisms for processing design structures or devices to generatelogically or otherwise functionally equivalent representations of thedesign structures and/or devices described above and shown in FIGS. 10A,10B. The design structures processed and/or generated by design flow 100may be encoded on machine-readable transmission or storage media toinclude data and/or instructions that when executed or otherwiseprocessed on a data processing system generate a logically,structurally, mechanically, or otherwise functionally equivalentrepresentation of hardware components, circuits, devices, or systems.Machines include, but are not limited to, any machine used in an ICdesign process, such as designing, manufacturing, or simulating acircuit, component, device, or system. For example, machines mayinclude: lithography machines, machines and/or equipment for generatingmasks (e.g., e-beam writers), computers or equipment for simulatingdesign structures, any apparatus used in the manufacturing or testprocess, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g., amachine for programming a programmable gate array).

Design flow 100 may vary depending on the type of representation beingdesigned. For example, a design flow 100 for building an applicationspecific IC (ASIC) may differ from a design flow 100 for designing astandard component or from a design flow 100 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 11 illustrates multiple such design structures including an inputdesign structure 102 that is preferably processed by a design process104. Design structure 102 may be a logical simulation design structuregenerated and processed by design process 104 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 102 may also or alternatively comprise data and/or programinstructions that when processed by design process 104, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 102 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 102 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 104 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 10A, 10B. Assuch, design structure 102 may comprise files or other data structuresincluding human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 104 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 10A, 10B to generate anetlist 106 which may contain design structures such as design structure102. Netlist 106 may comprise, for example, compiled or otherwiseprocessed data structures representing a list of wires, discretecomponents, logic gates, control circuits, I/O devices, models, etc.that describes the connections to other elements and circuits in anintegrated circuit design. Netlist 106 may be synthesized using aniterative process in which netlist 106 is resynthesized one or moretimes depending on design specifications and parameters for the device.As with other design structure types described herein, netlist 106 maybe recorded on a machine-readable data storage medium or programmed intoa programmable gate array. The medium may be a non-volatile storagemedium such as a magnetic or optical disk drive, a programmable gatearray, a compact flash, or other flash memory. Additionally, or in thealternative, the medium may be a system or cache memory, buffer space,or electrically or optically conductive devices and materials on whichdata packets may be transmitted and intermediately stored via theInternet, or other networking suitable means.

Design process 104 may include hardware and software modules forprocessing a variety of input data structure types including netlist106. Such data structure types may reside, for example, within libraryelements 108 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 84 nm, etc.). The data structure types may further include designspecifications 110, characterization data 112, verification data 114,design rules 116, and test data files 118 which may include input testpatterns, output test results, and other testing information. Designprocess 104 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 104 withoutdeviating from the scope and spirit of the invention. Design process 104may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 104 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 102 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 120.Design structure 120 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g., information stored in an IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 102, design structure 120 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 10A, 10B. In one embodiment, design structure120 may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 10A, 10B.

Design structure 120 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.,information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 120 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 10A, 10B. Designstructure 120 may then proceed to a stage 122 where, for example, designstructure 120: proceeds to tape-out, is released to manufacturing, isreleased to a mask house, is sent to another design house, is sent backto the customer, etc.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

References herein to terms such as “vertical”, “horizontal”, etc. aremade by way of example, and not by way of limitation, to establish aframe of reference. The term “horizontal” as used herein is defined as aplane parallel to a conventional plane of a semiconductor substrate,regardless of its actual three-dimensional spatial orientation. The term“vertical” refers to a direction perpendicular to the horizontal, asjust defined. The term “lateral” refers to a dimension within thehorizontal plane.

It will be understood that when an element is described as being“connected” or “coupled” to or with another element, it can be directlyconnected or coupled with the other element or, instead, one or moreintervening elements may be present. In contrast, when an element isdescribed as being “directly connected” or “directly coupled” to anotherelement, there are no intervening elements present. When an element isdescribed as being “indirectly connected” or “indirectly coupled” toanother element, there is at least one intervening element present.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A method of fabricating a device structure usinga first device region and a second device region comprised of a firstsemiconductor material of a substrate, the method comprising: forming acathode of a Schottky barrier diode in the first semiconductor materialof the first device region; patterning a hardmask layer to form a firstopening registered with the first device region and a second openingregistered with the second device region; forming a guard ring for theSchottky barrier diode inside the first opening in the hardmask layerand in direct contact with a first portion of the top surface of thefirst device region using a selective epitaxial growth process so that asecond semiconductor material of the guard ring has an epitaxialrelationship with the first semiconductor material in the first deviceregion; concurrently forming an extrinsic base of a vertical bipolarjunction transistor inside the second opening in the hardmask layer whenthe guard ring is formed, wherein the extrinsic base is comprised of thesecond semiconductor material in an epitaxial relationship with thefirst semiconductor material of the second device region; and forming ananode of the Schottky barrier diode in a contacting relationship with asecond portion of the top surface of the first device region, wherein aSchottky junction is defined between the anode and the cathode.
 2. Themethod of claim 1 wherein the hardmask layer is comprised of adielectric material that does not support epitaxial growth of thesemiconductor material of the guard ring.
 3. The method of claim 1wherein forming the anode of the Schottky barrier diode in a contactingrelationship with the second portion of the top surface of the deviceregion comprises: forming a silicide layer on the second portion of thetop surface of the first device region.
 4. The method of claim 1 whereinthe guard ring surrounds the second portion of the top surface of thefirst device region, and the anode is formed after the guard ring isformed.
 5. The method of claim 4 wherein forming the anode of theSchottky barrier diode on the second portion of the top surface of thefirst device region comprises: forming a silicide layer on the secondportion of the top surface of the first device region.
 6. The method ofclaim 5 wherein the silicide layer is further formed on an externalsurface of the guard ring.
 7. The method of claim 4 further comprising:implanting ions into the first device region for increasing anelectrical conductivity of the cathode of the Schottky barrier diode. 8.The method of claim 7 further comprising: concurrently implanting theions into the second device region to form a collector of the verticalbipolar junction transistor.
 9. The method of claim 1 whereinconcurrently forming the extrinsic base of the vertical bipolar junctiontransistor comprises: forming an intrinsic base layer on a top surfaceof the second device region, wherein the extrinsic base layer of thevertical bipolar junction transistor is formed on the intrinsic baselayer by the selective epitaxial growth process.
 10. The method of claim1 wherein the first semiconductor material is single crystal silicon,and the second semiconductor material is single crystal silicon orsingle crystal silicon-germanium.
 11. The method of claim 1 whereinforming the cathode of the Schottky barrier diode in the firstsemiconductor material of the first device region comprises: formingtrench isolation regions in the substrate.